Products and Services

​Teledyne Scientific has developed a suite of 50 ‐ 250 GHz power amplifier MMICs using its patented HBT‐cell and PA-cell architectures. Leveraging our 250‐nm InP heterojunction bipolar transistor (HBT) technology havin​​g 350‐GHz ft, 600‐GHz fmax, and 4.5‐BVceo figures‐of‐merit, our PA chips may be pro​cured having state‐of‐the‐art performance that greatly exceeds the capabilities of advance SiGe HBT and GaN HEMT technologies across E‐band to THz applications. The Teledyne 250‐nm InP HBT technology utilizes 50‐Ohm/sq thin‐film‐resistors, MIM capacitors, and a 4‐metal layer interconnect process in low loss BCB dielectric (2.7 er); this allows for dense transistor‐count InP MMICs with little parasitic losses, which is ideal at D‐band to THz frequency operation.

SSPA graph
SSPA Selection Brochure ​ pdf File

Part Number P​DF​​ ​Frequency Range (GHz)* ​Gain (dB​)​ ​Output Power, Saturated (mW) ​​​DC bias (W)
TSC 70-130G-3S1C
70 - 130
22 - 25
55 - 60
0.6
​TSC 70-130G-3S2C ​70 - 130
​16 - 20
​100 - 120
1.1
​TSC 70-130G-3S4C
70 - 130
​16 - 20
160 - 240
2.1
TSC 70-130G-4S2C
70 - 130
​22 - 25
100 - 120
1.4
​TSC 115-145G-5S2C
​115 - 145 ​24 - 26
​120 - 130
1.8
​TSC 115-145G-5S4C
​115 - 145
​23 - 25
​210 - 225
3.5
​TSC 94G-3S2C-E20
​88 - 104
​26 - 30
​100 - 110
0.42
​TSC 190G-5S1C ​185 - 200
23 - 25
​​8 -10 0.08
​TSC 125-185G-5S2C ​125 - 185
​20 - 22
75 - 100​​​​​​
1.4
​TSC 160-180G-5S2C ​160 - 180 ​20 - 23
​100 - 125
1.5
​TSC 160-180G-5S4C
​160 - 180 ​19 - 21 ​​175 - 225
3.0
​TSC 185-205G-6S2C ​185 - 205
​20 - 22​​​​​​​
80 - 90​
​1.8
​T04 3S4C-G1-P1​​​​​​​​​​​​
​190 - 245​​​​​​
23 - 28​​ ​50 - 80​​​​
1.6​​​​​​​​​​​​​​​​​​

​* See published references on the SSPA brochure for performance outside the specified operating frequency.

Delivery: 1-6 months ARO. Minimum order quantities may vary depending on price and availability. Export classification: ECCN 3A001.b.2.h. US export license may be required. ​​​​​​​​​