The 250nm InP heterojunction bipolar transistor (HBT) technology from Teledyne Scientific and Imaging offers through its 350GHz ft , 600GHz fmax, and 4.5BVceo figures-of-merit, MMIC performance that is state-of-the-art and well beyond what is achievable from advance SiGe HBT technologies for E-band to sub-mm-wave applications. The 250nm InP HBT technology utilizes 50-Ohm/sq thin-film-resistors, MIM capacitors, and a 4-metal layer interconnect process in low loss BCB dielectric (2.7 er); this allows for dense transistor-count InP MMICs with little parasitic losses, which is ideal at G-band and sub-mm-wave frequencies.

Part Number PDF​Frequency Range​Output Power
​TSC-T04-3S4C-G1-P1​190-245 GHz​50-70 mW