Teledyne Scientific has developed a suite of 50 ‐ 250 GHz power amplifier MMICs using its patented HBT‐cell and PA-cell architectures. Leveraging our 250‐nm InP heterojunction bipolar transistor (HBT) technology having 350‐GHz ft, 600‐GHz fmax, and 4.5‐BVceo figures‐of‐merit, our PA chips may be procured having state‐of‐the‐art performance that greatly exceeds the capabilities of advance SiGe HBT and GaN HEMT technologies across E‐band to THz applications. The Teledyne 250‐nm InP HBT technology utilizes 50‐Ohm/sq thin‐film‐resistors, MIM capacitors, and a 4‐metal layer interconnect process in low loss BCB dielectric (2.7 er); this allows for dense transistor‐count InP MMICs with little parasitic losses, which is ideal at D‐band to THz frequency operation.
